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  1 CMPA601C025F 25 w, 6.0 - 12.0 ghz, gan mmic, power amplifer the CMPA601C025F is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic) on a silicon carbide (sic) substrate, using a 0.25 m gate length fabrication process. the semiconductor offers 25 watts of power from 6 to 12 ghz of instantaneous bandwidth. the gan hemt mmic is housed in a thermally-enhanced, 10- lead 25 mm x 9.9 mm metal/ceramic fanged package. it offers high gain and superior effciency in a small footprint package at 50 ohms. r e v 2 . 2 C f e b r u a r y 2 0 1 6 typical performance over 6.0-12.0 ghz (t c = 25?c) parameter 6.0 ghz 7.5 ghz 9.0 ghz 10.5 ghz 12.0 ghz units small signal gain 35 34 34 37 31 db p out @ p in = 22 dbm 34 51 49 49.5 36.5 w power gain @ p in = 22 dbm 23 25 25 25 23.5 db pae @ p in = 22 dbm 21 36 35 33 27 % note: all data cw. features ? 34 db small signal gain ? 40 w typical p sat ? operation up to 28 v ? high breakdown voltage ? high temperature operation ? size 0.172 x 0.239 x 0.004 inches applications ? jamming amplifers ? test equipment amplifers ? broadband amplifers pn: CMPA601C025F package type: 440213 subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units conditions drain-source voltage v ds 84 v dc 25?c gate-source voltage v gs -10, +2 v dc 25?c storage temperature t stg -40, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 23 ma 25?c soldering temperature 1 t stg 245 ?c screw torque t 40 in-oz thermal resistance, junction to case 2 r jc 0.85 ?c/w 85?c @ p diss = 116 w case operating temperature 2 t c -40, +150 ?c note 1 refer to the application note on soldering at http://www.cree.com/rf/document-library note 2 see also, the power dissipation de-rating curve on page 4 electrical characteristics (frequency = 6.0 ghz to 12.0 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1,2 gate threshold v th -3.8 -2.8 -2.3 v v ds = 10 v, i d = 23 ma saturated drain current i ds 10.6 13.0 C a v ds = 6v, v gs = 2 v drain-source breakdown voltage v bd 84 100 C v v gs = -8 v, i ds = 23 ma rf characteristics 3 small signal gain s21 28 31 C db v dd = 28 v, i dq = 2 a, p in = -30 dbm output power 3,4 p out1 45.5 47.2 C dbm v dd = 28 v, i dq = 2 a, p in = 22 dbm, freq = 6 ghz output power 3,4 p out2 45.5 47.1 C dbm v dd = 28 v, i dq = 2 a, p in = 22 dbm, freq = 9.5 ghz output power 3,4 p out3 43.7 45.5 C dbm v dd = 28 v, i dq = 2 a, p in = 22 dbm, freq = 12 ghz power added effciency 3,4 pae 1 23 33.2 C % v dd = 28 v, i dq = 2 a, p in = 22 dbm, freq = 6 ghz power added effciency 3,4 pae 2 26 32.3 C % v dd = 28 v, i dq = 2 a, p in = 22 dbm, freq = 9.5 ghz power added effciency 3,4 pae 3 15.5 26.5 C % v dd = 28 v, i dq = 2 a, p in = 22 dbm, freq = 12 ghz input return loss s11 C -5 C db v dd = 28 v, i dq = 2 a, p in = -30 dbm output return loss s22 C -5 C db v dd = 28 v, i dq = 2 a, p in = -30 dbm output mismatch stress vswr C 5:1 vswr y no damage at all phase angles, v dd = 28 v, i dq = 2 a , p in = 22 dbm notes: 1 measured on-wafer prior to packaging. 2 scaled from pcm data. 3 measured in CMPA601C025F-amp with 12.4 ghz low pass flter. 4 fixture loss de-embedded using the following offsets. the offset is subtracted from the input offset value and added to the output offset value. a) 6.0 ghz - 0.13 db b) 9.50 ghz - 0.26 db c) 12.0 ghz - 0.35 db CMPA601C025F rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 CMPA601C025F typical performance figure 1. - small signal s-parameters vs. frequency v dd = 28 v, i dq = 2.0 a, p in = -30 dbm figure 2. - output power, gain and power added effciency vs. input power v dd = 28 v, i dq = 2.0 a, p in = 22 dbm 10 20 30 40 50 g a i n ( db ) s-parameter vdd=28v, idq=2.0a -30 -20 -10 0 5 6 7 8 9 10 11 12 13 14 15 frequency (ghz) s11 s21 s22 25 30 35 40 45 50 55 60 o u tp u t po w e r (d b m ), p a e(% ) & po w e r g a i n (d b ) output power, pae and power gain pin =22 dbm, vdd=28v, idq=2.0a 0 5 10 15 20 25 6 7 8 9 10 11 12 o u tp u t po w e r (d b m ), p a e(% ) & po w e r g a i n (d b ) frequency (ghz) pout pae pg CMPA601C025F rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 CMPA601C025F typical performance figure 3. - power added effciency vs. input power v dd = 28 v, i dq = 2.0 a figure 4. - output power vs. input power v dd = 28 v, i dq = 2.0 a 25 30 35 40 p a e (% ) power added efficiency vs. input power 10 15 20 8 10 12 14 16 18 20 22 24 26 input power (dbm) 6.0 ghz 9.5 ghz 12.0 ghz 42 44 46 48 50 ou t p u t po w er ( d b m) output power vs. input power 36 38 40 42 8 10 12 14 16 18 20 22 24 26 ou t p u t po w er ( d b m) input power (dbm) 6.0 ghz 9.5 ghz 12.0 ghz CMPA601C025F rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 15 20 25 30 35 po w er gai n ( d b ) gain vs. input power 0 5 10 15 8 10 12 14 16 18 20 22 24 26 po w er gai n ( d b ) input power (dbm) 6.0 ghz 9.5 ghz 12.0 ghz CMPA601C025F typical performance figure 5. - gain vs input power v dd = 28 v, i dq = 2.0 a figure 6. - power dissipation derating curve note 1. area exceeds maximum case operating temperature (see page 2). 80 100 120 140 160 180 po w er d i ssi p ati o n ( w ) CMPA601C025F power dissipation de-rating curve 0 20 40 60 0 25 50 75 100 125 150 175 200 225 250 po w er d i ssi p ati o n ( w ) maximum temperature ( c) p ? note 1 CMPA601C025F rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 CMPA601C025F-amp demonstration amplifer circuit bill of materials designator description qty c2,c4,c5,c7,c9,c12 cap,33000pf, 0805,100v, x7r 6 c1,c3,c6,c8,c10,c13 cap, 1.0uf, 100v, 10%, x7r, 1210 6 c11,c14 cap elect 3.3uf 80v fk smd 2 r1,r2 res 0.0 ohm 1/16w 0402 smd 2 j1,j2 conn, sma, panel mount jack, flange, 4-hole, blunt post, 20mil 2 j3 header rt>plz .1cen lk 9pos 1 w1 wire, black, 22 awg ~ 1.50 1 w2 wire, black, 22 awg ~ 1.75 1 q1 CMPA601C025F 1 CMPA601C025F-amp demonstration amplifer circuit CMPA601C025F rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 cmp601c025f-amp demonstration amplifer circuit schematic CMPA601C025F-amp demonstration amplifer circuit outline CMPA601C025F rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 product dimensions CMPA601C025F pin number qty 1 gate bias for stage 1, 2 & 3 2 gate bias for stage 1, 2 & 3 3 rf in 4 gate bias for stage 1, 2 & 3 5 gate bias for stage 1, 2 & 3 6 drain bias 7 drain bias 8 rf out 9 drain bias 10 drain bias CMPA601C025F rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 part number system parameter value units lower frequency 6.0 ghz upper frequency 1 12.0 ghz power output 25 w package flanged - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) lower frequency (ghz) cree mmic power amplifer product line CMPA601C025F CMPA601C025F rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
10 product ordering information order number description unit of measure image CMPA601C025F gan hemt each CMPA601C025F-tb test board without gan hemt each CMPA601C025F-amp test board with gan hemt installed each CMPA601C025F rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
11 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA601C025F rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.


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